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Detecting Resistive-Opens in RRAM using Programmable DfT Scheme

Nor Zaidi , Haron and Norsuhaidah , Arshad and Sukreen Hana , Herman (2013) Detecting Resistive-Opens in RRAM using Programmable DfT Scheme. In: 5th Asia Symposium on Quality Electronic Design, 26-28 August 2013, Penang, Malaysia.

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Abstract

Resistive Random Access Memory (RRAM) is one of the emerging memory devices that possesses a combined attribute of SRAM, DRAM and flash. How- ever, as the technology and fabrication process of such a promising memory devices are still immature, RRAM is expected to be impacted by process-variation faults such as resistive-open. This kind of defect is difficult to be detected using existing Design-for-Testability (DfT) scheme, which is developed based on a single critical defect value. This paper presents a new DfT scheme with the capability to identify faulty RRAM cells impacted by resistive-opens due to process variation. The new DfT scheme, referred to as Programmable Low Write Voltage (PLWV), is based on multiple voltage levels that can be programmed to suit the target fault coverage. The concept, design methodology and circuit are described. SPICE simulation results suggest that the proposed PLWV scheme can detect faults with different defect values at minimal circuit modification.

Item Type: Conference or Workshop Item (Paper)
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Electronics and Computer Engineering > Department of Computer Engineering
Depositing User: Dr Nor Zaidi Haron
Date Deposited: 23 Dec 2013 03:38
Last Modified: 28 May 2015 04:09
URI: http://eprints.utem.edu.my/id/eprint/10106

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