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Universal Mobility-Field Curves For Electrons In Polysilicon Inversion Layer

Muhammad Idzdihar , Idris and Faiz , Arith and Siti Amaniah , Mohd Chachuli and Haziezol Helmi, M. Yusof (2013) Universal Mobility-Field Curves For Electrons In Polysilicon Inversion Layer. International Journal of Electrical & Computer Sciences. pp. 36-40. ISSN 2077-1231

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Abstract

This paper reports the studies on the inversion-layer mobility in n-channel Poly-Si TFT’s with 1016cm-3 substrate impurity concentration. The validity and limitations of the universal relationship between the inversion layer mobility and the effective normal field (Eeff) was examined.

Item Type: Article
Subjects: Q Science > QA Mathematics > QA75 Electronic computers. Computer science
Divisions: Faculty of Electronics and Computer Engineering > Department of Computer Engineering
Depositing User: MUHAMMAD IDZDIHAR IDRIS
Date Deposited: 03 Jun 2014 01:08
Last Modified: 28 May 2015 04:25
URI: http://eprints.utem.edu.my/id/eprint/12543

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