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Analyses for various doping structures of SOI-based optical phasemodulator using free carrier dispersion effectB

Mardiana, Bidin and Sahbudin, Saari and Menon, P.S and Haroon, Hazura and Hanim, Abdul Razak and Arsad, N. and Abdullah, H. (2014) Analyses for various doping structures of SOI-based optical phasemodulator using free carrier dispersion effectB. Optik, 125. pp. 1800-1803. ISSN 0030-4026

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Abstract

tThis paper highlights the study on various structure of silicon-on-insulator (SOI) optical phase modula-tors based on free carrier dispersion effect. The proposed modulators employ the forward biased P-I-Ndiode structure integrated in the waveguide and will be working at 1.55 m optical telecommunicationswavelength. Three kinds of structure are compared systematically where the p+ and n+ doping positionsare varied. The modeling and characterization of the SOI phase modulators was carried out by 3D numer-ical simulation package. Our results show that the position of doping regions have a great influences tothe device performance. It was discovered that the best structure in this work demonstrated modulationefficiency of 0.015 V cm with a length of 155 m.

Item Type: Article
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
Divisions: Faculty of Electronics and Computer Engineering > Department of Telecommunication Engineering
Depositing User: Hazura Haroon
Date Deposited: 17 Sep 2014 11:45
Last Modified: 28 May 2015 04:29
URI: http://eprints.utem.edu.my/id/eprint/13089

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