Design consideration of N-drift region doping concentration in high voltage VDMOS transistor

Haziezol Helmi bin Mohd Yusof, H.H.M.Yusof and Wijaya Bayu Murti, Wijaya Bayu Murti and Norhayati binti Soin, N.Soin (2014) Design consideration of N-drift region doping concentration in high voltage VDMOS transistor. International Journal of Scientific Research Engineering & Technology (IJSRET), 3 (4). pp. 764-766. ISSN 2278-0882

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Abstract

N-drift doping concentration has important contribution in determining the breakdown voltage and on-resistance of the device. It should be well considered because higher N- drift doping concentration can minimize the on-resistance of the device, but also lowering breakdown voltage of the device that expected to be high. It also has a proportional relationship with threshold voltage degradation caused by hot carrier injection. So the variation of N-drift doping concentration can be used to optimize the VDMOS transistor performance.

Item Type:	Article
Uncontrolled Keywords:	VDMOS, breakdown voltage, on-resistance, hot carrier injection, HCI
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:	Faculty of Electronics and Computer Engineering > Department of Industrial Electronics
Depositing User:	HAZIEZOL HELMI MOHD YUSOF
Date Deposited:	27 Jan 2015 04:55
Last Modified:	28 May 2015 04:35
URI:	http://eprints.utem.edu.my/id/eprint/14005
Statistic Details:	View Download Statistic

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