Various Sloped Wall Effect on Silicon on Insulator (SOI) Phase Modulator

Bidin, Mardiana and Shaari, Sahbudin and Menon, P.S and A.R, Hanim and Haroon, Hazura and Arsad, N. and Abdullah, H. (2013) Various Sloped Wall Effect on Silicon on Insulator (SOI) Phase Modulator. Advanced Science Letters. pp. 1438-1440. ISSN ISSN 1936-6612

Full text not available from this repository.


This paper highlights the study of carrier injection effect on silicon-on-insulator phase modulator with various sloped wall waveguide structure. By default, the sloped angle 54.74° arises from anisotropic chemical etching with the waveguide aligned to the 〈111〉 crystal direction. However, etched surfaces cannot be consistent depending on many variables such as reaction temperature and etchant concentration. Therefore, different possible angles are studied in this report. The characterization of the phase modulator was carried out by 2D Silvaco CAD software under different applied voltages. The n + p + n + structure was employed to study the device performance in terms of modulation efficiency and absorption.

Item Type: Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Electronics and Computer Engineering > Department of Telecommunication Engineering
Depositing User: Hazura Haroon
Date Deposited: 17 Sep 2014 11:55
Last Modified: 17 Sep 2014 11:55
Statistic Details: View Download Statistic

Actions (login required)

View Item View Item