Pemodulat optik interferometer mach zehnder (MZI) suntikan pembawa di atas silikon-di atas-penebat (SOI)

Hanim , Abdul Razak (2014) Pemodulat optik interferometer mach zehnder (MZI) suntikan pembawa di atas silikon-di atas-penebat (SOI). PhD thesis, UTeM.

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Pemodulat Optik Interferometer Mach Zehnder (MZI) Suntikan Pembawa Di Atas Penebat (SOI) 24pages.pdf

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Wavelength-division-multiplexing (WDM) technology has been widely employed in current optical communication systems due to the high bandwidth demand resulting from the spread usage of Internet. To improve component performance and reduce its cost, planar lightwave circuits (PLC) technology provides a very promising platform for component integration. Among many PLC-based device structures, an optical modulator that converts data from the electrical to the optical domain is a fundamental device. Optical modulators with high extinction ratio (ER) are desirable to be integrated in the network transmitter for optimum performance. In this work, a Silicon-On-Insulator (SOI) optical modulator based on Mach-Zehnder interferometer (MZI) structure with carrier injection effect operating at 1.55μm wavelength is designed, characterized and optimized. The modeling of the device is divided into two parts which are carrier injection phase modulator modeling and the modeling of MZI intensity modulator. The modeling and electrical characterization of the carrier injection phase modulator were carried out using the ATHENA and ATLAS software from SILVACO International. The p-i-n diode electrical structure was employed to create the carrier injection effect. From the electrical analysis, it was found out that the best modulator speed is 0.95 GHz with the refractive index change, �n of 0.0045241. The MZI waveguide structure was designed using a 3 dB 1x2 MMI splitter and a 3 dB 2x1 MMI coupler. The spliter and the coupler was connected with two arms of waveguides. The MZI modulator was designed using Beam Propagation Method (BPM) simulation method which is OptiBPM whilst the OptiSys software was utilized for optical modulator characterization. The comprehensive analysis on the performance of MZI modulator based on SOI which includes the relationship of the design parameters of the device was the first time to be reported. The parameters include the MMI width size used as splitter and coupler, the width of the input and output waveguides, value of the forward biased voltage, the phase modulator length and the passive arm length. Meanwhile, the studied modulator’s performance are the insertion loss, ER and modulation efficiency. Once the relationships between the parameters with the modulator’s performance were identified, the process of finding the optimum performance of the modulator was carried out using the Taguchi’s statistical orthogonal array method. The optimum value of the MMI width size is 22 μm for the splitter and coupler, 5 μm for width of the input and output waveguides, 0.85 V for the value of forward biased, 700 μm for the phase modulator’s length and 1180 μm for the passive arm’s length. In terms of the optimum device performance, the modulator experiences 3.37 dB of insertion loss, 23.98 dB of ER and modulation efficiency of 0.0407 Vcm. The optimum performance of the modulator was compared to the past experimental work and it was found out that the modulator shows a competitive performance. The systematic approach used in this research saves time and cost prior to fabrication process.

Item Type: Thesis (PhD)
Uncontrolled Keywords: Metal oxide semiconductors, Complementary, Silicon-on-insulator technology
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Library > Tesis > FKEKK
Depositing User: Norziyana Hanipah
Date Deposited: 29 Jul 2015 06:36
Last Modified: 29 Jul 2015 06:36
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