Mohd Azlishah, Othman and I., Harrison (2012) 220GHz detection using 035 uM AMS mosfet as sub-THz detector Drain bias detraction. In: Third International Conference on Intelligent Systems Modelling and Simulation, 8-10 February, 2012, Le Meridien Hotel Kota Kinabalu, Malaysia. (Submitted)
![[img]](http://eprints.utem.edu.my/style/images/fileicons/text.png) |
Text
220GHz detection using 035 uM AMS mosfet as sub-THz detector Drain bias detraction200.pdf Download (252kB) |
Abstract
In this paper we present the detection of sub-THz radiation at 220 GHz by using 0.35 μm AMS Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The design procedure and experimental setup are shown in order to design and characterize the MOSFETs photoresponse. The experiment and observation of photoresponse are measured against gate voltage with a drain current bias detraction at room temperature. The measured photoresponse is a superposition of a generally increasing response with a decrease in V cs coupled with a small peak approximately at threshold and there is evidence that the MOSFET can be a sensitive sub-THz detector in the room temperature.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Uncontrolled Keywords: | sub-THz,detection, MOSFETs, photoresponse |
| Subjects: | Q Science > QA Mathematics > QA75 Electronic computers. Computer science |
| Divisions: | Faculty of Electronics and Computer Engineering > Department of Telecommunication Engineering |
| Depositing User: | Noor Rahman Jamiah Jalil |
| Date Deposited: | 22 Oct 2015 02:50 |
| Last Modified: | 22 Oct 2015 02:50 |
| URI: | http://eprints.utem.edu.my/id/eprint/15087 |
| Statistic Details: | View Download Statistic |
Actions (login required)
 |
View Item |