Numerical study on thermal stability performance of 4H- SiC MOSFETs

Arith, Faiz and Zulkifle, Nurul Amirah and Abd Aziz, Muhammad Hafiz and Mohd Seth, Muhammad Najmi and Noorasid, Nur Syamimi and Al-Ani, Oras Ahmed and Yakult, Merve (2025) Numerical study on thermal stability performance of 4H- SiC MOSFETs. International Journal of Nanoelectronics and Materials, 19 (1). pp. 1-7. ISSN 2232-1535

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Abstract

4H-SiC MOSFETs offer superior performance and reliability in extreme conditions, making them a great option for high-power and high-temperature applications. However, thermal stability issues still hinder device performance improvements, which impact threshold stability, interface quality, and reliability. This work explores the issue by employing a 2D model that collectively integrates and disentangles the roles of electrical, thermal, and structural properties of 4H-SiC MOSFETs using COMSOL Multiphysics. Important electrical metrics are retrieved and examined under various heat conditions. The findings indicate that the Vth decreases from 3.05 to 2.80 V with increasing temperatures. On the other hand, the subthreshold slope rises noticeably from 41 mV/dec to 126 mV/dec with temperature. The results support the necessity of thermal control in the operational characteristics of 4H-SiC MOSFETs.

Item Type:	Article
Uncontrolled Keywords:	4H-SiC MOSFET, COMSOL Multiphysics, Power electronics, Thermal effects, Threshold voltage, Transconductance
Divisions:	Faculty Of Electronics And Computer Technology And Engineering
Depositing User:	Sabariah Ismail
Date Deposited:	18 May 2026 02:12
Last Modified:	18 May 2026 02:12
URI:	http://eprints.utem.edu.my/id/eprint/29716
Statistic Details:	View Download Statistic

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