X-ray Diffraction Study of Intermetallic Cu-Al Interconnection in Electronic Components

T., Joseph Sahaya Anand and Chua, Kok Yau (2012) X-ray Diffraction Study of Intermetallic Cu-Al Interconnection in Electronic Components. In: International Conference of Young Researchers on Advanced Materials, July 1 - 6, 2012, MATRIX Building< National University of Singapore (NUS), Singapore. (Unpublished)

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Cu wire bonding has been an emerging interconnection technique for semiconductor industry. Research of intermetallic compounds (IMCs) of Cu (wire) – Al (bond pad metallization) in nanometer scale at the bonding interface is usually carried out with expensive and time consuming analytical techniques. X-ray Diffraction is a potential tool that offers easier sample preparation, lower cost of analysis and high accuracy. This paper attempts to utilize X-ray Diffraction tool to study the nano-size IMC that present at the Cu-Al interface. Various sample preparation methods are applied prior to XRD measurement. Effectiveness of each preparation methods towards the detection of IMC is examined.

Item Type: Conference or Workshop Item (Poster)
Subjects: T Technology > TJ Mechanical engineering and machinery
Divisions: Faculty of Manufacturing Engineering > Department of Engineering Materials
Depositing User: Dr. T. Joseph Sahaya Anand
Date Deposited: 26 Mar 2013 04:27
Last Modified: 28 May 2015 03:46
URI: http://eprints.utem.edu.my/id/eprint/6957
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