Electrosynthesized NiS2 thin films and their optical and semiconductor studies

T., Joseph Sahaya Anand and Rajes, KM Rajan and Mohd Zaidan , Abdul Aziz (2013) Electrosynthesized NiS2 thin films and their optical and semiconductor studies. Reports in Electrochemistry, 3. pp. 25-29. ISSN 2230-4096

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Nickel sulfide thin films were prepared using electrodeposition on indium tin oxide-coated glass substrates. Films were characterized using X-ray diffraction for crystallographic analysis. The films were shown to be polycrystalline in nature with good uniformity. From scanning electron micrographs, the surface appeared to be comparatively granular with irregularly shaped grains. From optical analysis, the bandgap range was between 1.22 eV and 1.15 eV with an indirect bandgap nature. Mott-Schottky plot confirmed that the films were found to be n-type, and the semiconductor parameters of the film were derived.

Item Type: Article
Uncontrolled Keywords: X-ray diffraction, scanning electron micrograph, optical studies, Mott-Schottky analysis
Subjects: T Technology > TJ Mechanical engineering and machinery
Divisions: Faculty of Manufacturing Engineering > Department of Engineering Materials
Depositing User: Dr. T. Joseph Sahaya Anand
Date Deposited: 20 Aug 2013 00:28
Last Modified: 28 May 2015 04:01
URI: http://eprints.utem.edu.my/id/eprint/9143
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