Transition Metal Chalcogenide Thin Films for Photoelectrochemical / Solar Cells

T., Joseph Sahaya Anand and S., Shariza and Lim, Mei Ying (2012) Transition Metal Chalcogenide Thin Films for Photoelectrochemical / Solar Cells. In: 3rd Infineon-MMU Technical Symposium, 9 April 2012, Multimedia University, Melaka.


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Thin films of molybdenum chalcogenides (MoX2, X=S, Se and Te) have been electrosynthesized on indium-tin-oxide; (ITO)-coated glass and stainless steel substrates. The films were characterized for their structural, morphological and compositional characteristics. Their optical and semiconducting parameters were also analyzed in order to determine the suitability of the thin films for photoelectrochemical (PEC) / solar cell applications. Structural analysis via X-ray diffraction (XRD) reveals that the films are polycrystalline in nature. Scanning electron microscope (SEM) studies reveals the films were adherent to the substrate. Compositional analysis via energy dispersive X-ray (EDX) technique confirms the presence of Mo, S, Se and Te elements in the film stoichiometry. The optical studies show that the films are of direct bandgap. Results on the semiconductor parameters analysis of the films showed that the nature of the Mott-Schottky plots indicates that the films obtained are of n-type material. For all films, the semiconductor parameter value falls in the range of many other transition metal chalcogenides and this has proven that MoX2 thin films is capable as a solar / PEC cell material

Item Type: Conference or Workshop Item (Keynote)
Uncontrolled Keywords: Molybdenum chalcogenide, Thin Films, Electrodeposition, Direct bandgap, Mott-Schottky plots.
Subjects: T Technology > TJ Mechanical engineering and machinery
Divisions: Faculty of Manufacturing Engineering > Department of Engineering Materials
Depositing User: Dr. T. Joseph Sahaya Anand
Date Deposited: 20 Aug 2013 08:52
Last Modified: 28 May 2015 04:01
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