Sputtering Of Nitride Materials

Mohd Syahrin Amri, Mohd Noh (2015) Sputtering Of Nitride Materials. Masters thesis, Universiti Teknikal Malaysia Melaka.

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Abstract

Zinc Nitride now becomes an interest towards the semiconductor potential material on photovoltaics and optoelectronics application. The deposition method based on DC magnetron sputtering technique had been successfully developed in University of Sheffield using glass substrates. The activities towards Nitrogen flow rate and various glass substrate temperatures had been successfully evaluated. Results showed starting at 45 sccm Nitrogen flow rate provide a positive Zinc Nitride development and the increment of substrate temperature had maximizing the mobility performance. The developed Zinc Nitride refractive index had been calculated with results in the range of 2.28 to 3.13. The deposited Zink Nitride thickness was in the range of 522 nm to 683 nm with 70 minutes deposition time in in each run. The refractive index for the deposited Zinc Nitride had been calculated which ranging from 2.28 to 3.13. Annealing with temperature 320°C for 1.5 minutes in Nitrogen environment had shown consistent electronic properties performance and no signs of physical oxidation.

Item Type: Thesis (Masters)
Uncontrolled Keywords: Semiconductors, Nitrides, Zinc nitride
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Library > Disertasi > FTK
Depositing User: Ahmad Tarmizi Abdul Hadi
Date Deposited: 09 Aug 2016 03:50
Last Modified: 09 Aug 2016 03:50
URI: http://eprints.utem.edu.my/id/eprint/16919
Statistic Details: View Download Statistic

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