Muhammad Idzdihar , Idris and Faiz , Arith and Siti Amaniah , Mohd Chachuli and Haziezol Helmi, M. Yusof (2013) Universal Mobility-Field Curves For Electrons In Polysilicon Inversion Layer. International Journal of Electrical & Computer Sciences. pp. 36-40. ISSN 2077-1231
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1312703-1305-9494-IJECS-IJENS.pdf - Published Version Download (715kB) |
Abstract
This paper reports the studies on the inversion-layer mobility in n-channel Poly-Si TFT’s with 1016cm-3 substrate impurity concentration. The validity and limitations of the universal relationship between the inversion layer mobility and the effective normal field (Eeff) was examined.
| Item Type: | Article |
|---|---|
| Subjects: | Q Science > QA Mathematics > QA75 Electronic computers. Computer science |
| Divisions: | Faculty of Electronics and Computer Engineering > Department of Computer Engineering |
| Depositing User: | MUHAMMAD IDZDIHAR IDRIS |
| Date Deposited: | 03 Jun 2014 01:08 |
| Last Modified: | 28 May 2015 04:25 |
| URI: | http://eprints.utem.edu.my/id/eprint/12543 |
| Statistic Details: | View Download Statistic |
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