Mardiana, Bidin and Hazura, Haroon and Hanim, Abdul Razak and Sahbudin, Saari and Huda, Abdullah (2010) Various doping concentration effect on silicon on insulator (SOI) phase modulator. In: 2010 International Conference on Photonics (ICP), 5-7 July 2010, Langkawi, Kedah. (Submitted)
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Various doping concentration effect on silicon on insulator (SOI) phase modulator235.pdf Download (925kB) |
Abstract
This paper reports the effect of doping concentration to the electrical characteristic performance of the phase modulator in the carrier injection mode at wavelength 1.55μm. The phase modulator device has been integrated in the silicon-on-insulator (SOI) rib waveguide with the p-i-n diode structure. The electrical device performance is predicted using the 2-D semiconductor package SILVACO (CAD) software under DC operation. The least doping concentration of p+ and n+ region produces the least change of refractive index of the modulator. Meanwhile, results show that by increasing the doping concentrations, the value of Iπ decreases. This means that the phase modulator performance is better with increased doping concentrations.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Uncontrolled Keywords: | Phase modulator,Silicon-on-Insulator,carrier injection,refractive index change |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Faculty of Electrical Engineering |
| Depositing User: | Noor Rahman Jamiah Jalil |
| Date Deposited: | 29 Oct 2015 08:06 |
| Last Modified: | 29 Oct 2015 08:06 |
| URI: | http://eprints.utem.edu.my/id/eprint/15164 |
| Statistic Details: | View Download Statistic |
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