Effect Of Channel Length Variation On Analog And RF Performance Of Junctionless Double Gate Vertical Mosfet

Salehuddin, Fauziyah and Roslan, Ameer Farhan and Kaharudin, Khairil Ezwan and Mohd Zain, Anis Suhaila (2019) Effect Of Channel Length Variation On Analog And RF Performance Of Junctionless Double Gate Vertical Mosfet. Journal Of Engineering Science And Technology, 14 (4). pp. 2410-2430. ISSN 1823-4690

Text KEKAHARUDIN-JESTEC-2019.PDF Download (662kB)

Abstract

This paper investigates the effect of channel length (Lch) variation upon analogue and radio frequency (RF) performance of Junctionless Double Gate Vertical MOSFET (JLDGVM). The study has been performed under the fixed level of process parameters by considering the dependence of analogue and RF properties on the channel length. Furthermore, this paper aims to give a comprehensive insight on possible improvement in the performance of analogue and RF of the JLDGVM device. The structure and characteristics of the device are developed and extracted respectively via 2D TCAD simulation. The results show that both transconductance generation factor (TGF) and transconductance (gm) of the JLDGVM device are tremendously increased by 83% and 74% respectively as the scale of channel length is reduced from 12 nm to 9 nm. On the other hand, the unity gain cut-off frequency (fT) and the gain-band-width product (GBW) tremendously improved by ~93% and ~74% respectively as the channel length of the device is scaled from 12 nm to 9 nm.

Item Type:	Article
Uncontrolled Keywords:	Cut-off frequency, Gain-band-width product, Transconductance, Transconductance generation factor, Analog, RF Performance, Junctionless Double Gate Vertical Mosfet
Divisions:	Faculty of Electronics and Computer Engineering > Department of Computer Engineering
Depositing User:	Norfaradilla Idayu Ab. Ghafar
Date Deposited:	21 Oct 2020 08:25
Last Modified:	21 Oct 2020 08:25
URI:	http://eprints.utem.edu.my/id/eprint/24248
Statistic Details:	View Download Statistic

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