Work Function Variations On Electrostatic And RF Performances Of JLSDGM Device

Salehuddin, Fauziyah and Kaharudin, Khairil Ezwan and Mohd Zain, Anis Suhaila and Roslan, Ameer Farhan and Ahmad, Ibrahim (2021) Work Function Variations On Electrostatic And RF Performances Of JLSDGM Device. Indonesian Journal of Electrical Engineering and Computer Science, 23 (1). pp. 150-161. ISSN 2502-4752

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Abstract

This paper offers a systematic analysis on the impact of work function (WF) variations on electrostatic and radio frequency (RF) performances of n-channel junctionless strained double gate (DG) (n-JLSDGM) metal oxide semiconductor field effect transistor (MOSFET). The study has been performed under othe constant level of design parameters that operates in saturation as a transconductance amplifier, considering the dependence of electrostatic and RF performance on the variation of WF. Furthermore, this paper aims to provide physical insight into the improved electrostatic and RF performances of the proposed n-JLSDGM device. The device layout and characteristics were designed and extracted respectively via a comprehensive 2-D simulation. Device performances such as on-state current (ION), off-state current (IOFF), on-off current ratio, subthreshold swing (SS), intrinsic capacitances, dynamic power dissipation (Pdyn), cut-off frequency (fT) and maximum oscillation frequency (fmax) are intensively investigated in conjunction with WF variations.

Item Type:	Article
Uncontrolled Keywords:	Cut-off frequency, Dynamic power dissipation, Intrinsic capacitances, Maximum oscillation frequency, Off-state current, On-off ratio, On-state current
Divisions:	Faculty of Electronics and Computer Engineering
Depositing User:	Sabariah Ismail
Date Deposited:	08 Mar 2022 11:51
Last Modified:	08 Mar 2022 11:51
URI:	http://eprints.utem.edu.my/id/eprint/25631
Statistic Details:	View Download Statistic

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