Fabrication of transparent ITO/GTO bilayer diode thin films

Sutan Chairul, Imran and Echimoto, Atsushi and Tazawa, Ryutaro and Murai, Kei-ichiro and Moriga, Toshihiro (2023) Fabrication of transparent ITO/GTO bilayer diode thin films. Modern Physics Letters B, 37 (19). pp. 1-5. ISSN 0217-9849

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Abstract

Transparent diodes were fabricated by layering a Ga–Sn–O (GTO) film onto an In2O3:Sn (ITO) film using a facing-targeted DC sputtering method. When a GTO film containing∼25 mol% Ga was deposited on the surface of the conductive ITO film at room temperature, a diode bilayer film was obtained. The bilayer film exhibited rectification characteristics of approximately 0 and 3.8 µA/V when negative and positive voltages were applied, respectively. However, the rectification characteristics increased up to 68.3 µA/V in the positive voltage applied region after annealed at 200◦C.

Item Type:	Article
Uncontrolled Keywords:	GTO, ITO, Bilayer film, Diode.
Divisions:	Faculty of Electrical Engineering
Depositing User:	Norfaradilla Idayu Ab. Ghafar
Date Deposited:	04 Jul 2024 09:37
Last Modified:	04 Jul 2024 09:37
URI:	http://eprints.utem.edu.my/id/eprint/27208
Statistic Details:	View Download Statistic

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