Mohamed, Mohd Ambri and Asyadi Azam, Mohd and Kawabuchi, Hitoshi and Shikoh, Eiji and Fujiwara, Akihiko (2010) Characterization of carbon nanotube field-effect transistor fabricated by direct growth method. In: The 2nd International Conference on Engineering and ICT (ICEI 2010), 18-20 February 2010, Holiday Inn, Melaka.
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Abstract
We have fabricated carbon nanotube field-effect transistor by means of direct growth method and investigated their structural and transport characteristics. The FET shows ambipolar operation. We showed the current modulation by bias and gate voltage and its relation. The device operation is consistent with Schottky-type FET, and showed small value of activation energy.
| Item Type: | Conference or Workshop Item (Speech) |
|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
| Divisions: | Faculty of Manufacturing Engineering > Department of Engineering Materials |
| Depositing User: | Dr Mohd Asyadi 'Azam Bin Mohd Abid |
| Date Deposited: | 25 Jul 2012 00:21 |
| Last Modified: | 28 May 2015 03:27 |
| URI: | http://eprints.utem.edu.my/id/eprint/4675 |
| Statistic Details: | View Download Statistic |
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