Optimization of input process parameters variation on threshold voltage in 45 nm NMOS device

Fauziyah , Salehuddin (2011) Optimization of input process parameters variation on threshold voltage in 45 nm NMOS device. International Journal of Physical Sciences, 6 (30). pp. 7026-7034. ISSN 1992-1950

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Abstract

In this study, Taguchi method was used to optimize the influence of process parameter variations on threshold voltage (VTH) in 45 nm n-channel metal oxide semiconductor (NMOS) device. The orthogonal array, the signal-to-noise ratio, and analysis of variance were employed to study the performance characteristics of a device. In this paper, eleven process parameters (control factors) were varied for 2 levels to perform 12 experiments. Whereas, the two noise factors were varied for 2 levels to get four readings of VTH for every row of experiment. VTH results were used as the evaluation variable. This work was done using technology computer-aided design (TCAD) simulator, consisting of a process simulator, ATHENA and device simulator, ATLAS. These two simulators were combined with Taguchi method to aid in design and optimize the process parameters. In this research, compensation implantation energy was identified as one of the process parameters that have the strongest effect on the response characteristics. While the halo implantation dosage was identified as an adjustment factor to get the nominal values of threshold voltage for NMOS device equal to 0.176 V.

Item Type: Article
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
Q Science > QC Physics
Divisions: Faculty of Electronics and Computer Engineering > Department of Computer Engineering
Depositing User: Mrs Fauziyah Salehuddin
Date Deposited: 13 Jul 2012 04:02
Last Modified: 28 May 2015 02:37
URI: http://eprints.utem.edu.my/id/eprint/3798
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