Wideband 5.8 GHz Radio Frequency Amplifier with 3 dB Π- Network Attenuator Isolation

Othman , A. R and Hamidon , A. H and Husain , M.N and Johal , M.S and Ibrahim , A.B (2011) Wideband 5.8 GHz Radio Frequency Amplifier with 3 dB Π- Network Attenuator Isolation. JTEC, Vol. 3 (No. 1). pp. 1-6. ISSN 2180 - 1843

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Abstract

This paper presents a design of radio frequency amplifier (RFA), which operates at 5.8 GHz frequency for WiMAX application. The RFA designed used T-matching network consisting of lump reactive elements, 3 dB attenuator and microstrip line at the input and output impedance. The RFA developed in this project contribute a gain of 15.6 dB with overall noise figure of 2.4 dB. The overall measured bandwidth measures is 1.240 GHz with S parameters S11, S12 and S22 measured are -12.4 dB, -25.5 dB and -12.3 dB respectively. The RFA used FET transistor EPA018A from Excelics Semiconductor Inc.

Item Type: Article
Uncontrolled Keywords: Amplifier, Radio Frequency,Amplifier, Microstrip
Subjects: Q Science > Q Science (General)
Divisions: Faculty of Electronics and Computer Engineering > Department of Telecommunication Engineering
Depositing User: Prof Madya Abdul Rani Othman
Date Deposited: 20 Mar 2013 04:55
Last Modified: 28 May 2015 03:45
URI: http://eprints.utem.edu.my/id/eprint/6789
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