Operation mode of phase modulation based on carrier dispersion effect in p-i-n diode of silicon rib waveguide

Mardiana, Bidin and Haroon, Hazura and Hanim, Abdul Razak and Menon, P.S and Abdullah, H. (2010) Operation mode of phase modulation based on carrier dispersion effect in p-i-n diode of silicon rib waveguide. In: IEEE International Conference on Semiconductor Electronics (ICSE 2010), 28-30 Jun 2010, Melaka.

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Abstract

This paper highlights the study of the carrier injection mode and the carrier depletion mode of the phase modulator. The phase modulator device has been integrated in the silicon rib waveguide by using the p-i-n diode structure. The electrical device performance is predicted by using the 2-D semiconductor package SILVACO (CAD) software under DC operation. Summarily, the phase modulator device has less sensitivity to the effective refractive index changes when operating in reverse biased or depletion mode compared to the forward biased or injection mode.

Item Type: Conference or Workshop Item (Speech)
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
Divisions: Faculty of Electronics and Computer Engineering > Department of Telecommunication Engineering
Depositing User: Hazura Haroon
Date Deposited: 17 Sep 2014 11:49
Last Modified: 28 May 2015 04:29
URI: http://eprints.utem.edu.my/id/eprint/13080
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