Mardiana, Bidin and Haroon, Hazura and Hanim, Abdul Razak and Sahbudin, Saari and Abdullah, H. (2010) Various Doping Concentration Effect on Silicon-on-Insulator (SOI) Phase Modulator. In: International Conference on Photonics (ICP 2010), 5-7 Julai 2010, Pulau Langkawi.
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Abstract
This paper reports the effect of doping concentration to the electrical characteristic performance of the phase modulator in the carrier injection mode at wavelength 1.55μm. The phase modulator device has been integrated in the silicon-on-insulator (SOI) rib waveguide with the p-i-n diode structure. The electrical device performance is predicted using the 2-D semiconductor package SILVACO (CAD) software under DC operation. The least doping concentration of p+ and n+ region produces the least change of refractive index of the modulator. Meanwhile, results show that by increasing the doping concentrations, the value of I decreases. This means that the phase modulator performance is better with increased doping concentrations.
| Item Type: | Conference or Workshop Item (Speech) |
|---|---|
| Subjects: | T Technology > TA Engineering (General). Civil engineering (General) |
| Divisions: | Faculty of Electronics and Computer Engineering > Department of Telecommunication Engineering |
| Depositing User: | Hazura Haroon |
| Date Deposited: | 17 Sep 2014 11:47 |
| Last Modified: | 28 May 2015 04:29 |
| URI: | http://eprints.utem.edu.my/id/eprint/13083 |
| Statistic Details: | View Download Statistic |
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