Mardiana, Bidin and Sahbudin, Saari and Menon, P.S and Haroon, Hazura and Hanim, Abdul Razak and Arsad, N. and Abdullah, H. (2014) Analyses for various doping structures of SOI-based optical phasemodulator using free carrier dispersion effectB. Optik, 125. pp. 1800-1803. ISSN 0030-4026
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Abstract
tThis paper highlights the study on various structure of silicon-on-insulator (SOI) optical phase modula-tors based on free carrier dispersion effect. The proposed modulators employ the forward biased P-I-Ndiode structure integrated in the waveguide and will be working at 1.55 m optical telecommunicationswavelength. Three kinds of structure are compared systematically where the p+ and n+ doping positionsare varied. The modeling and characterization of the SOI phase modulators was carried out by 3D numer-ical simulation package. Our results show that the position of doping regions have a great influences tothe device performance. It was discovered that the best structure in this work demonstrated modulationefficiency of 0.015 V cm with a length of 155 m.
Item Type: | Article |
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Subjects: | T Technology > TA Engineering (General). Civil engineering (General) |
Divisions: | Faculty of Electronics and Computer Engineering > Department of Telecommunication Engineering |
Depositing User: | Hazura Haroon |
Date Deposited: | 17 Sep 2014 11:45 |
Last Modified: | 28 May 2015 04:29 |
URI: | http://eprints.utem.edu.my/id/eprint/13089 |
Statistic Details: | View Download Statistic |
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