Plasma Dispersion Effect for Various Doping Configuration on the SOI Phase Modulator with Trapezoidal Rib Waveguide

Mardiana, Bidin and Haroon, Hazura and Hanim, Abdul Razak and Sahbudin, Saari and Menon, P.S and Abdullah, H. (2012) Plasma Dispersion Effect for Various Doping Configuration on the SOI Phase Modulator with Trapezoidal Rib Waveguide. Advanced Materials Research, 403-40. pp. 4403-4407. ISSN 1662-8985

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Abstract

Silicon-on-insulator (SOI) is becoming more attractive as a photonic material for photonic integrated circuits (PLC) because of its unique features. In this paper, we modeled and simulated the performance of the SOI phase modulator with various doping configuration based on the plasma dispersion effect. The effect of the free injected carrier in the region of the propagating optical mode have been investigated at the optical wavelength of 1.55µm. The proposed device have been integrated in the SOI rib waveguide with trapezoidal cross section structure and four different doping configurations have been chosen which are the n+p+n+, p+n+p+, n+n+p+ and the p+p+n+. Our results show that the n+n+p+ configuration possessed the best modulation efficiency of 0.026V.cm and gained the smallest absorption loss of 1.1dB at 0.95V applied voltage.

Item Type: Article
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
Divisions: Faculty of Electronics and Computer Engineering > Department of Computer Engineering
Depositing User: Hazura Haroon
Date Deposited: 17 Sep 2014 11:44
Last Modified: 28 May 2015 04:29
URI: http://eprints.utem.edu.my/id/eprint/13090
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