Design and Fabrication of Radio Frequency Amplifier with 3 dB π-Network Attenuator Isolation

Othman, A.R and Ibrahim , A.B and Husain, M.N and Johal , M.S and A.Rashid , K.A and Saad, M.M (2012) Design and Fabrication of Radio Frequency Amplifier with 3 dB π-Network Attenuator Isolation. In: 2012 IEEE Asia-Pacific Conference on Applied Electromagnetics (APACE 2012), 11-13 December 2012, Melaka.

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Abstract

This paper presents the design and fabrication of radio frequency amplifier (RFA), which operates at 5.8 GHz unlicensed frequency for WiMAX application. The RFA designed used T-matching network consisting of lump reactive elements, 3 dB attenuator and microstrip line at the input and output impedance. The RFA developed in this project contribute a gain of 15.6 dB with overall noise figure of 2.4 dB. The overall measured bandwidth is 1.240 GHz with S parameters S11, S12 and S22 measured are -12.4 dB, -25.5 dB and -12.3 dB respectively. The isolation result shows that there is a significant contribution using 3 dB π-network. The RFA used FET transistor EPA018A from Excelics Semiconductor Inc.

Item Type:	Conference or Workshop Item (Paper)
Uncontrolled Keywords:	Amplifier, Radio Frequency Amplifier, Microstrip
Subjects:	Q Science > Q Science (General)
Divisions:	Faculty of Electronics and Computer Engineering > Department of Telecommunication Engineering
Depositing User:	Prof Madya Abdul Rani Othman
Date Deposited:	21 Mar 2013 01:52
Last Modified:	28 May 2015 03:45
URI:	http://eprints.utem.edu.my/id/eprint/6821
Statistic Details:	View Download Statistic

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