Othman , A. R and Hamidon , A. H and Abdul Wasli., C, and Ting, J. T. H, and Mustaffa , M. F (2010) 5.8 GHz Radio Frequency Amplifier with 3 dB Π Network Attenuator. In: 2010 Indonesia-Malaysia Microwave-Antennas Conference (IMMAC 2010), 11-12 June 2010, Depok Indonesia.
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Abstract
This paper presents a design of radio frequency amplifier (RFA), which operates at 5.8 GHz frequency for WiMAX application. The RFA designed used T matching network consist of lump reactive elements, 3 dB attenuator and microstrip line at the input and output impedance. The RFA developed in this project contributes a gain of 15.6 dB with overall noise figure of 2.4 dB. The overall measured bandwidth measures is 1.240 GHz with S parameters S11, S12 and S22 measured are -12.4 dB, -25.5 dB and -12.3 dB respectively. The RFA used FET transistor EPA018A from Excelics Semiconductor Inc.
Item Type: | Conference or Workshop Item (Paper) |
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Uncontrolled Keywords: | Amplifier, Radio Frequency Amplifier, Microstrip |
Subjects: | Q Science > Q Science (General) |
Divisions: | Faculty of Electronics and Computer Engineering > Department of Computer Engineering |
Depositing User: | Prof Madya Abdul Rani Othman |
Date Deposited: | 25 Feb 2013 02:27 |
Last Modified: | 28 May 2015 03:45 |
URI: | http://eprints.utem.edu.my/id/eprint/6856 |
Statistic Details: | View Download Statistic |
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