Othman, Mohd Azlishah and Mohammed Napiah, Zul Atfyi Fauzan and Ismail, Mohd Muzafar and Sulaiman, Hamzah Asyrani and Misran, Mohamad Harris and Meor Said, Maizatul Alice (2012) An Investigation on I-V Characteristic for CMOS PIN Photodiode: Variable I-Layer. In: The 3rd International Conference on Integrated Circuits and Devices in Vietnam (ICDV 2012), August 13-15, 2012, Danang, Vietnam.
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Abstract
In this paper presented an investigation on I-V characteristic for CMOS PIN Photodiode. PIN diodes are widely used in optics and microwave circuits as it acts as a current controlled resistor at these frequencies. PIN diode performance is greatly influenced by the geometrical size of the device, especially in the intrinsic region. Two different I-layer thickness of PIN diode structure has been designed using Sentaurus Technology Computer Aided Design (TCAD) tools. The I-layer thickness (or width) is varied from 4 µm to 8 µm in order to investigate its effects on the current-voltage (I-V) characteristics. These structures were design based on CMOS process. Keyword - PIN Photodiode, Silvaco TCAD, IV Characteristic, Reverse Bias.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Faculty of Electronics and Computer Engineering > Department of Computer Engineering |
| Depositing User: | ZUL ATFYI FAUZAN MOHAMMED NAPIAH |
| Date Deposited: | 15 Jul 2013 04:26 |
| Last Modified: | 28 May 2015 03:45 |
| URI: | http://eprints.utem.edu.my/id/eprint/6884 |
| Statistic Details: | View Download Statistic |
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