An Investigation on I-V Characteristic for CMOS PIN Photodiode: Variable I-Layer

Othman, Mohd Azlishah and Mohammed Napiah, Zul Atfyi Fauzan and Ismail, Mohd Muzafar and Sulaiman, Hamzah Asyrani and Misran, Mohamad Harris and Meor Said, Maizatul Alice (2012) An Investigation on I-V Characteristic for CMOS PIN Photodiode: Variable I-Layer. In: The 3rd International Conference on Integrated Circuits and Devices in Vietnam (ICDV 2012), August 13-15, 2012, Danang, Vietnam.

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In this paper presented an investigation on I-V characteristic for CMOS PIN Photodiode. PIN diodes are widely used in optics and microwave circuits as it acts as a current controlled resistor at these frequencies. PIN diode performance is greatly influenced by the geometrical size of the device, especially in the intrinsic region. Two different I-layer thickness of PIN diode structure has been designed using Sentaurus Technology Computer Aided Design (TCAD) tools. The I-layer thickness (or width) is varied from 4 µm to 8 µm in order to investigate its effects on the current-voltage (I-V) characteristics. These structures were design based on CMOS process. Keyword - PIN Photodiode, Silvaco TCAD, IV Characteristic, Reverse Bias.

Item Type: Conference or Workshop Item (Paper)
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Electronics and Computer Engineering > Department of Computer Engineering
Date Deposited: 15 Jul 2013 04:26
Last Modified: 28 May 2015 03:45
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